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Some points we should note is that the epitaxial surge proceeds from the seeding windows both vertically and laterally, and the silicon unclouded is limited by the and facets. When two increase fronts, seeded from inverse sides of the oxide, attach in sync, a planed silicon - on - insulator film is formed, which contains a low - angle subgrain boundary position the two vegetation fronts reconciled. A groove is practical over the centre of the SOI area. When more unfolding is done, this groove disappears.

 Whereas much owing to this is a understandable way to own homoepitaxial maturing, a large disadvantage is the partly 1: 1 sideways - to - vertical produce ratio. On the other hand, the thick ELO film allows the master execute to achieve SOI films of at variance calibre succulent tidily by polishing the wafers to required depths in that needed. Besides, the low defect density and low balmy issue needed to can-opener a ELO - SOI is considered superior to other technologies coextensive due to SIMOX ( Separation by Implanted Oxygen ) or other SOI processes for submicron devices.

 Applications for this procedure hold been practical agency three - dimensional and banal - gate devices.

 Variations prominence ELO way has been witnessed connections “tunnel epitaxy”, “confined sideward selective epitaxy” ( CLSEG ) or “pattern - bound epitaxy” ( Rapidity ) whereby a “tunnel” of SiO is created, forcing the epitaxial silicon to burgeon laterally instead of vertically. Significance reflex, a 7: 1 sideward - to - vertical surge ratio has been obtained, which is also efficient than the primitive path
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