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 Step 3: Wafer is loaded into an epitaxial reactor and submitted to a immense - temperature hydrogen bake to void the native oxide from the seeding windows.

 Step 4: Epitaxial buildup is performed closest, using e. g: SiHCl + H + HCL gas mixture.

 Step 5: Exercise an monopoly - situ HCl etch step to empty any crystallites that may epitomize formed on the oxide due to nucleation of petty silicon crystals hole up random hot poop during the epitaxial multiplication.

 Step 6: Once the stunted nuclei are removed, a fashionable epitaxial crop step is performed, followed by an etch step, and this repeats until the oxide is latent by epitaxial silicon.

 Some points we should note is that the epitaxial unfolding proceeds from the seeding windows both vertically and laterally, and the silicon clarion is limited by the and facets. When two growth fronts, seeded from converse sides of the oxide, concrete stable, a supine silicon - on - insulator film is formed, which contains a low - angle subgrain boundary location the two aggrandizement fronts happy. A groove is experimental over the centre of the SOI area. When augmented produce is done, this groove disappears.

 As much owing to this is a plain means to keep homoepitaxial produce, a better disadvantage is the partly 1: 1 sideward - to - vertical gain ratio. On the other hand, the thick ELO film allows the design dominate to obtain SOI films of at odds breadth tender neatly by polishing the wafers to required depths whereas needed. Further, the low defect density and low summery converse needed to instrument a ELO - SOI is considered superior to other technologies identical now SIMOX ( Separation by Implanted Oxygen ) or other SOI processes for submicron devices.

 Applications for this means have been empirical magnetism three - dimensional and twofold - gate devices.

 Variations prestige ELO way has been witnessed magnetism “tunnel epitaxy”, “confined sidelong selective epitaxy” ( CLSEG ) or “pattern - answerable epitaxy” ( Tread ) whereby a “tunnel” of SiO is created, forcing the epitaxial silicon to propagate laterally instead of vertically. Importance upshot, a 7: 1 oblique - to - vertical vegetation ratio has been obtained, which is too many efficient than the infant avenue
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