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 Step 1: An oxide layer is grown on the ( 100 ) silicon wafer. Succeeding, patterning is carried out on the oxide to demarcate the windows. The edges of the windows are oriented along the direction.

 Step 2: Cleaning of the wafer is carried out

 Step 3: Wafer is loaded into an epitaxial reactor and submitted to a tremendous - temperature hydrogen bake to extract the native oxide from the seeding windows.

 Step 4: Epitaxial heightening is performed alongside, using e. g: SiHCl + H + HCL gas alloy.

 Step 5: Appropriate an impact - situ HCl etch step to extract quantum crystallites that may emblematize formed on the oxide due to nucleation of minuscule silicon crystals plant random science during the epitaxial gain.

 Step 6: Once the bitty nuclei are removed, a original epitaxial advancement step is performed, followed by an etch step, and this repeats until the oxide is dark by epitaxial silicon.